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| MITSUBISHI SEMICONDUCTOR MGFC5212 K-Band 2-Stage Power Amplifier Target Specifications ELECTRICAL CHARACTERISTICS (Ta=25 Degree C.) Symbol IDSS1 IDSS2 Vp1 Vp2 P1dB Gain Inpur Return Loss Out Put Return Loss IM3 Parameter Test Conditions Min. Limits Typ. Max. Unit mA mA V V dBm Drain Saturation Current Vd=3.0V Drain Saturation Current Pinch Off Voltage Vd=3.0V,Id=0.6mA Pinch Off Voltage Vd=3.0V,Id=1.2mA f=24.5-26.5 GHz, Output Power at 1 dB Vd1=Vd2=6.0V , Compression Point Id1=90mA*, Gain Inpur Return Loss Out Put Return Loss Id2=180mA* 150.0 300.0 -2.0 -2.0 23.0 13.0 10.0 10.0 22.0 240.0 480.0 -1.0 -1.0 dB dB dB dBc f=24.5-26.5 GHz, Vd1=Vd2=6.0V , Inter Modulation Level Id1=90mA*,Id2=180 mA*, Pout=20dBm *:Ids at RF off MITSUBISHI ELECTRIC |
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